Low Trapping Effects and High Blocking Voltage in Sub-Micron-Thick AlN/GaN Millimeter-Wave Transistors Grown by MBE on Silicon Substrate

Vertical High-Voltage Transistors on Thick Silicon-on-Insulator

Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE

The large signal characteristics of 1 m long -gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed. The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively. High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz. Large signal gain and power density values of ...

High-gradient millimeter-wave accelerator on a planar dielectric substrate.

We report the first high-gradient studies of a millimeter-wave accelerator, employing for the first time a planar dielectric accelerator, powered by means of a 0.5-A, 300-MeV, 11.424-GHz drive electron beam, synchronous at the 8th harmonic, 91.392 GHz. Embedded in a ring-resonator circuit within the electron beam line vacuum, this structure was operated at 20 MeV/m, with a circulating power of ...

A Novel Low Voltage, Low Power and High Gain Operational Amplifier Using Negative Resistance and Self Cascode Transistors

In this work a low power, low voltage and high gain operational amplifier is proposed. For this purpose a negative resistance structure is used in parallel with output to improve the achievable gain. Because of using self cascode transistors in the output, the proposed structure remains approximately constant in a relatively large output voltage swing causing an invariable gain. To evaluate the...

High-Electron Mobility Graphene Channel Transistors for Millimeter-Wave Applications

We have fabricated and characterized the graphenechannel field effect transistors (GFETs) on semi-insulating SiC substrates. In our first GFETs, the device exhibits n-type FET operation with the transconductance of 0.1 mS/mm at the drain voltage of 0.5 V. The current gain cutoff frequency characterized by S parameter measurement is 0.5 GHz. These characteristics are primarily limited by the low...